High‐level injection in quasi‐neutral region ofn/pjunction devices: Numerical results and empirical model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358915
Reference2 articles.
1. The Transport of Added Current Carriers in a Homogeneous Semiconductor
2. An extended ambipolar model: Formulation, analytical investigations, and application to photocurrent modeling
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4. ENHANCEMENT EFFECT OF THE DEMBER FIELD IN FORWARD SEMICONDUCTOR p+–n JUNCTIONS;Modern Physics Letters B;2012-05-29
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