Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure
Author:
Affiliation:
1. Division of Materials Science, Korea Basic Science Institute, Daejeon 305-806, South Korea
2. Department of Materials Science and Engineering, KAIST, Daejeon 305-701, South Korea
Funder
Ministry of Trade, Industry and Energy (Ministry of Trade, Industry and Energy, Korea)
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906487
Reference24 articles.
1. Spintronics: A Spin-Based Electronics Vision for the Future
2. Longitudinal spin Seebeck effect: from fundamentals to applications
3. Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve
4. Conversion of spin current into charge current at room temperature: Inverse spin-Hall effect
5. Spin caloritronics
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