Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3626589
Reference19 articles.
1. Nitride-based quantum dots for single photon source applications
2. Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
3. Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
4. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
5. Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
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2. Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits;physica status solidi (RRL) – Rapid Research Letters;2022-09-25
3. Self-assembled InN quantum dots on side facets of GaN nanowires;Journal of Applied Physics;2018-04-28
4. Electrostatic built-in fields in wurtzite III-N nanostructures: Impact of growth plane on second-order piezoelectricity;Physical Review B;2017-10-20
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