Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy-Reference-Cited by-同舟云学术

Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

Published:2005-10-31 Issue:18 Volume:87 Page:181906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tang Xiaohong,Zhao Jinghua,Chin Mee Koy,Mei Ting,Yin Zongyou,Deny Sentosa,Du An Yan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2120897

Reference28 articles.

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3. Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

4. G. B. Stringfellow, inCommon Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D. W. Kisker, A. Zangwill, and T. Keuch (Materials Research Society, Pittsburgh, 1993), pp. 35–46.

5. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors

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