Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3227886
Reference11 articles.
1. Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon
2. Oxidation kinetics of hot-pressed silicon carbide
3. Interface structures in beta‐silicon carbide thin films
4. Oxidation Dependence on Defect Density in 3C-SiC Films
5. Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si
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