Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes
Author:
Affiliation:
1. Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0021764
Reference44 articles.
1. Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes
2. Transmission electron microscopy investigation of dislocations in forward-biased 4H-SiC p–i–n diodes
3. Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions
4. Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
5. Degradation of hexagonal silicon-carbide-based bipolar devices
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
2. Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules;The Journal of Physical Chemistry C;2023-07-12
3. Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process;Journal of Electronic Materials;2023-04-27
4. Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2023-03-29
5. Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC;Japanese Journal of Applied Physics;2022-11-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3