Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125181
Reference9 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Optical properties of InGaAsN: a new 1-eV bandgap material system
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