On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3449080
Reference17 articles.
1. EPR of a thermally induced defect in silicon
2. Defect Levels in Thermally-Quenched Silicon Crystals
3. Effects of Heat‐Treatments on Electrical Properties of Boron‐Doped Silicon Crystals
4. Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si
5. Vacancy Formation Energy of Silicon Determined by a New Quenching Method
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1. Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities;Applied Sciences;2022-08-15
2. Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon;physica status solidi (a);2022-01-17
3. Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal;Applied Physics A;2021-11
4. Growth of Crystalline Silicon for Solar Cells: Czochralski Si;Handbook of Photovoltaic Silicon;2019
5. GeVn complexes for silicon-based room-temperature single-atom nanoelectronics;Scientific Reports;2018-12
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