Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1541944
Reference22 articles.
1. High Temperature Sensors Based on Metal–Insulator–Silicon Carbide Devices
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