Visible‐spectrum multiple‐quantum‐well In1−x′Gax′P1−z′Asz′‐ In1−xGaxP1−zAsz(x≳x′,z≳z′) heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328225
Reference25 articles.
1. Quantum-well heterostructure lasers
2. Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser
3. Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures
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1. Phase stability and single phase compositional ranges in the In1−xGaxP epitaxial layers grown on GaAs (100) substrates;Solid State Communications;1999-03
2. Can liquid-phase epitaxy still be useful for optoelectronic devices?;Materials Science and Engineering: B;1991-07
3. Lattice Parameters of GainP/GaAs Epi-Layers at Temperatures 77 to 752 K;physica status solidi (a);1990-06-16
4. LPE growth of InGaP/InGaAsP multiple thin layers on (111)A GaAs substrates;Journal of Crystal Growth;1989-12
5. Periodic doping and heterostructure multilayers of GaxIn1−xAsyP1−y: LPE growth and characterization;Journal of Crystal Growth;1985-12
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