Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372052
Reference20 articles.
1. InGaN-based violet laser diodes
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. Growth of group III nitrides on Si(111) by plasma-assisted molecular beam epitaxy
4. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
5. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
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1. Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy;Japanese Journal of Applied Physics;2012-02-01
2. Band-Structure Lineup at In$_{0.2}$Ga$_{0.8}$N/Si Heterostructures by X-ray Photoelectron Spectroscopy;Japanese Journal of Applied Physics;2012-01-26
3. Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate;IEEE Journal of Quantum Electronics;2011-07
4. EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR;Modern Physics Letters B;2009-06-20
5. Electrical properties of InGaN-Si heterojunctions;physica status solidi (c);2009-01-26
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