A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation
Author:
Affiliation:
1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001203
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4. Emitter-collector shorts in bipolar devices
5. Characteristics and origin of emitter-collector shorts, or “pipes”, in multi-emitter power transistors
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