Effect of Zr concentration on the microstructure of Al and the magnetoresistance properties of the magnetic tunnel junction with a Zr-alloyed Al–oxide barrier
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592312
Reference23 articles.
1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
2. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
3. Strongly reduced bias dependence in spin–tunnel junctions obtained by ultraviolet light assisted oxidation
4. Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method
5. Gallium oxide as an insulating barrier for spin-dependent tunneling junctions
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2. Characterization of NbN Tunnel Junctions With Radical-Nitrided $\hbox{AlN}_{\rm x}$ Barriers;IEEE Transactions on Applied Superconductivity;2013-06
3. Effects of Composition on Atomic Structure, Diffusivity, and Viscosity of Liquid Al-Zr Alloys;Metallurgical and Materials Transactions A;2012-01-19
4. Atomic and electronic structure of amorphous Al–Zr alloy films;Journal of Physics: Condensed Matter;2011-06-13
5. Local structure of the Zr–Al metallic glasses studied by proposed n-body potential through molecular dynamics simulation;Journal of Materials Research;2010-09
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