Emitter-base bias dependence of the collector current ideality factor in abrupt Pnp AlGaAs/GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372036
Reference22 articles.
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1. Off-zone-center or indirect band-gap-like hole transport in heterostructures;Physical Review B;2001-04-20
2. Strong wavevector dependence of hole transport in heterostructures;Superlattices and Microstructures;2001-03
3. Amount of hole conversion across AlxGa1−xN/GaN heterojunctions;Journal of Applied Physics;2000-09
4. Transverse momentum dependence of electron and hole tunneling in a full band tight-binding simulation [resonant tunnelling diodes];2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)
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