Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch-Reference-Cited by-同舟云学术

Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch

Published:2021-11-07 Issue:17 Volume:130 Page:174503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Heuser T.¹^ORCID,Braun M.¹^ORCID,McIntyre P.¹,Senesky D. G.²³

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, 450 Serra Mall, Stanford, California 94305, USA

2. Department of Aeronautics and Astronautics, Stanford University, 450 Serra Mall, Stanford, California 94305, USA

3. Department of Electrical Engineering, Stanford University, 450 Serra Mall, Stanford, California 94305, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0069602

Reference29 articles.

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3. C. Honsberg, W. A. Doolittle, M. Allen, and C. Wang, “GaN betavoltaic energy converters,” in Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005 (IEEE, 2005), pp. 102–105.

4. Energy Harvesting for Structural Health Monitoring Sensor Networks

5. Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors

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