Wide-range (0.33%–100%) 3C–SiC resistive hydrogen gas sensor development
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1773935
Reference11 articles.
1. Electrical properties dependent on H2 gas for new structure diode of Pt–thin WO3–SiC
2. Current status of silicon carbide based high-temperature gas sensors
3. High temperature catalytic metal field effect transistors for industrial applications
4. Hydrogen response mechanism of Pt–GaN Schottky diodes
5. H2-induced surface and interface potentials on Pd-activated SnO2 sensor films
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