Control of pinned layer magnetization direction in spin-valve-type magnetic tunnel junction with an IrMn layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1676093
Reference12 articles.
1. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
2. Progress and outlook for MRAM technology
3. Biasing materials for spin-valve read heads
4. PtMn single and dual spin valves with synthetic ferrimagnet pinned layers
5. Spin-valve giant magnetoresistive films with antiferromagnetic Ir-Mn layers
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1. Effect of short-duration annealing on the exchange bias in IrMn/Co films;Journal of Magnetism and Magnetic Materials;2011-10
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