Effect of Si-doping on InAs nanowire transport and morphology-Reference-Cited by-同舟云学术

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Effect of Si-doping on InAs nanowire transport and morphology

Published:2011-09 Issue:5 Volume:110 Page:053709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wirths S.,Weis K.,Winden A.,Sladek K.,Volk C.,Alagha S.,Weirich T. E.,von der Ahe M.,Hardtdegen H.,Lüth H.,Demarina N.,Grützmacher D.,Schäpers Th.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3631026

Reference54 articles.

1. Toward Nanowire Electronics

2. Nanowire-based one-dimensional electronics

3. Semiconductor nanowires

4. Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

5. Vertical wrap-gated nanowire transistors

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1. RAZLIChNYE REZhIMY ELEKTRONNOGO TRANSPORTA V DOPIROVANNYKh NANOPROVOLOKAKh InAs;Журнал экспериментальной и теоретической физики;2024-12-15

2. Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires;ACS Applied Materials & Interfaces;2024-02-20

3. Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method;Crystals;2022-12-16

4. In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowires;Nanotechnology;2022-08-31

5. Te-doped selective-area grown InAs nanowires for superconducting hybrid devices;Physical Review Materials;2022-02-24

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