Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
2. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0049537
Reference23 articles.
1. Porous nitride semiconductors reviewed
2. (Invited) Applications of Electrochemistry for Novel Wide Bandgap GaN Devices
3. Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification
4. Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example
5. Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy;Physica Scripta;2023-12-29
2. Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM;IEEE Journal of Quantum Electronics;2022-08
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