Photoluminescence of InGaAs/GaAs single quantum well adjacent to a selectively oxidized AlAs layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119903
Reference11 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers
3. Cavity characteristics of selectively oxidized vertical‐cavity lasers
4. Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors
5. Room‐temperature normal‐mode coupling in a semiconductor microcavity utilizing native‐oxide AlAl/GaAs mirrors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence from InGaAs/GaAs quantum well regrown on a buried patterned oxidized AlAs layer;Applied Physics Letters;2014-02-10
2. Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine;IEE Proceedings - Optoelectronics;2005
3. Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors;Applied Physics Letters;1999-03-29
4. Thermal Quenching of the Photoluminescence of InGaAs/GaAs Single Quantum Wells Adjacent to a Selectively Oxidized AlAs Layer;Japanese Journal of Applied Physics;1998-03-01
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