Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1543631
Reference9 articles.
1. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
2. Resonant magnetotunneling through individual self-assembled InAs quantum dots
3. Tunneling current through self-assembled InAs quantum dots embedded in symmetric and asymmetric AlGaAs barriers
4. Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots
5. Resonant tunnelling via InAs self-organized quantum dot states
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3. Study on the I–V characteristics of quantum well/dot embedded GaAs/AlGaAs structures - A transfer matrix method;AIP Conference Proceedings;2015
4. Energy Band and Absorption Coefficient of Quantum Dots in a Well Structure;Acta Physica Polonica A;2012-07
5. Transport properties of a lateral semiconductor quantum dot defined by a single connected metallic front-gate;Physica E: Low-dimensional Systems and Nanostructures;2005-01
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