cw narrow beam (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92423
Reference15 articles.
1. Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures
2. Laser oscillation with optically pumped very thin GaAs‐AlxGa1−xAs multilayer structures and conventional double heterostructures
3. Quantum-well heterostructure lasers
4. Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition
5. Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy
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1. All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells;IEEE Journal of Quantum Electronics;1993-06
2. Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum wells;IEEE Journal of Quantum Electronics;1992
3. AlGaAs/GaAs superlattice multi-quantum-well laser diode;Superlattices and Microstructures;1989-01
4. CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE;Japanese Journal of Applied Physics;1988-12-20
5. Excitonic and electron‐hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs‐GaAlAs multiple quantum well lasers at room temperature;Applied Physics Letters;1987-04-20
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