Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks-Reference-Cited by-同舟云学术

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Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks

Published:2007-08 Issue:3 Volume:102 Page:034514
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Batude P.,Garros X.,Clavelier L.,Le Royer C.,Hartmann J. M.,Loup V.,Besson P.,Vandroux L.,Campidelli Y.,Deleonibus S.,Boulanger F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2767381

Reference24 articles.

1. Proceedings of Silicon Nanoelectronic Workshop;Clavelier L.,2005

2. Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate

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