Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3081644
Reference27 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance
3. Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
4. Spin-Dependent Recombination on Silicon Surface
5. Explanation of the large spin-dependent recombination effect in semiconductors
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1. Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films;Applied Physics Letters;2021-02-22
2. Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices;Review of Scientific Instruments;2019-12-01
3. Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors;Journal of Applied Physics;2019-09-28
4. Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station;Review of Scientific Instruments;2019-01
5. Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling;Journal of Applied Physics;2016-05-14
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