Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2905220
Reference14 articles.
1. Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells
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3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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5. Growth Behavior of Nonpolar ZnO onM-plane andR-plane Sapphire by Metalorganic Vapor Phase Epitaxy
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