Application of a semiconductor tip to capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121927
Reference15 articles.
1. Scanning capacitance microscopy
2. Scanning capacitance microscopy on a 25 nm scale
3. Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy
4. Charge storage in a nitride‐oxide‐silicon medium by scanning capacitance microscopy
5. SiO2/SiSystem Studied by Scanning Capacitance Microscopy
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1. Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
2. A study of linear and the second nonlinear admittance about the charge polarization around junction-boundaries in a quantum cavity structure;Acta Physica Sinica;2004
3. Transmission,S-matrix, and partial densities of states for ac transport through a resonant cavity with multileads;Physical Review B;2002-07-25
4. The applications of nonlinear dynamic admittance in nanostructures;Journal of Physics D: Applied Physics;2001-03-20
5. High-resolution scanning capacitance microscopy of silicon devices by surface beveling;Applied Physics Letters;2000-05
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