Epitaxial regrowth of Sb implanted Si1−xGexalloy layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107043
Reference11 articles.
1. Compensating impurity effect on epitaxial regrowth rate of amorphized Si
2. Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon
3. Impurity‐stimulated crystallization and diffusion in amorphous silicon
4. Laser-Induced Solid Phase Crystallization in Amorphous Silicon Films
5. Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements
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1. Si/SiGe heterostructures for Si-based nanoelectronics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
2. Chapter 4 SiGe/Si processing;Processing and Properties of Compound Semiconductors;2001
3. Carrier activation process in As+ implanted relaxed Si1−Ge alloys;Thin Solid Films;2000-07
4. Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
5. Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications;Journal of Electronic Materials;1998-05
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