Transition metal dichalcogenides thyristor realized by solid ionic conductor gate induced doping-Reference-Cited by-同舟云学术

Transition metal dichalcogenides thyristor realized by solid ionic conductor gate induced doping

Published:2020-08-03 Issue:5 Volume:117 Page:053102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Guangyao¹²,Deng Wenjie¹²,Chen Xiaoqing¹²,Wang Peng¹²,Xiao Yu³,Li Jingfeng¹²,Chu Feihong¹²,Liu Beiyun¹²,Chen Yongfeng¹²,Lu Yue¹⁴,Sui Manling¹⁴^ORCID,Liu Zhihong⁵,Diao Xungang³,Yan Hui¹²,Zhang Yongzhe¹²^ORCID

Affiliation:

1. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China

2. The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing 100124, People's Republic of China

3. Key Laboratory of Micro-Nano Measurement-Manipulation and Physics (Ministry of Education), Department of Physics, Beihang University, Beijing 100191, People's Republic of China

4. Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology. No.100, Pingleyuan, Chaoyang District, Beijing 100124, People's Republic of China

5. School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

Funder

Beijing Excellent talent program

Equipment preresearch project of China Electronics Technology Group Corporation

General program of Science and Technology Development project of Beijing Municipal Education commission

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0017432