Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371016
Reference28 articles.
1. Ultimate limit for defect generation in ultra-thin silicon dioxide
2. Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films
3. Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
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