Fe3O4/ZnO: A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition-Reference-Cited by-同舟云学术

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Fe3O4/ZnO: A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition

Published:2011-01-03 Issue:1 Volume:98 Page:012512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Paul M.,Kufer D.,Müller A.,Brück S.,Goering E.,Kamp M.,Verbeeck J.,Tian H.,Van Tendeloo G.,Ingle N. J. C.,Sing M.,Claessen R.

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3540653

Reference16 articles.

1. Electronic Structure in High Temperature Phase of Fe3O4

2. Probing the interface ofFe3O4/GaAsthin films by hard x-ray photoelectron spectroscopy

3. All oxide ferromagnet/semiconductor epitaxial heterostructures

4. Experimental determination of electron inelastic mean free paths in 13 elemental solids in the 50 to 5000 eV energy range by elastic-peak electron spectroscopy

5. Anti-phase domains and magnetism in epitaxial magnetite layers

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3. Tuning the optical and magnetic properties of ZnO by Fe₃O₄;Physica Scripta;2022-06-22

4. Spin- and time-resolved photoelectron spectroscopy and diffraction studies using time-of-flight momentum microscopes;Journal of Vacuum Science & Technology A;2022-03

5. Bulk spin polarization of magnetite from spin-resolved hard x-ray photoelectron spectroscopy;Physical Review B;2021-07-19

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