Pseudogap state density in sputtereda‐Si:H from field effect and capacitance measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92666
Reference6 articles.
1. Investigation of the density of localized states in a-Si using the field effect technique
2. Electronic density of states in discharge‐produced amorphous silicon
3. Field effect and thermoelectric power on arsenic-doped amorphous silicon
4. Determination of the density of states of a-Si:H using the field effect
5. Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spatially resolved space‐charge density in the hydrogenated amorphous silicon Schottky barrier from surface photovoltage measurements;Journal of Applied Physics;1990-05-15
2. The density of states in the mobility gap of amorphous-silicon films computed by a new analytical method;Il Nuovo Cimento D;1988-03
3. References;The Physics and Applications of Amorphous Semiconductors;1988
4. Surface states and the exponential valence-band tail ina-Si:H;Physical Review B;1987-10-15
5. Signal, recombination effects and noise in amorphous silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1987-10
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