Strain‐dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structures-Reference-Cited by-同舟云学术

Strain‐dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structures

Published:1985-11 Issue:9 Volume:47 Page:998-1000
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vasquez R. P.,Madhukar A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.95956

Reference24 articles.

1. Thermal nitridation of silicon dioxide films

2. Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET's

3. Study of the kinetics and mechanism of the thermal nitridation of SiO2

4. Time‐dependent compositional variation in SiO2films nitrided in ammonia

5. Thermal nitridation of Si and SiO2for VLSI

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