Silicon cantilevers locally heated from 300 K up to the melting point: Temperature profile measurement from their resonances frequency shift-Reference-Cited by-同舟云学术

Silicon cantilevers locally heated from 300 K up to the melting point: Temperature profile measurement from their resonances frequency shift

Published:2021-05-14 Issue:18 Volume:129 Page:184503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pottier Basile¹,Aguilar Sandoval Felipe²^ORCID,Geitner Mickaël¹,Esteban Melo Francisco³^ORCID,Bellon Ludovic¹^ORCID

Affiliation:

1. Univ Lyon, Ens de Lyon, Univ Claude Bernard Lyon 1, CNRS, Laboratoire de Physique, F-69342 Lyon, France

2. Departamento de Ciencias Naturales y Tecnología, Universidad de Aysén, Obispo Vielmo 62, Coyhaique, Chile

3. Departamento de Física and Center for Soft Matter Research, SMAT-C, Universidad de Santiago de Chile, Avenida Ecuador 3493, Estación Central, 9170124 Santiago, Chile

Funder

Fondo Nacional de Desarrollo Científico y Tecnológico

Fondequip Chile

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0040733

Reference61 articles.

1. A review of MEMS oscillators for frequency reference and timing applications

2. Quantum-coherent coupling of a mechanical oscillator to an optical cavity mode

3. Thermal and ambient‐induced deflections of scanning force microscope cantilevers

4. Enhanced functionality of cantilever based mass sensors using higher modes

5. Cantilever transducers as a platform for chemical and biological sensors

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