Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC-Reference-Cited by-同舟云学术

Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC

Published:2020-01-01 Issue:1 Volume:8 Page:011104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Persson Ingemar¹^ORCID,Armakavicius Nerijus²^ORCID,Bouhafs Chamseddine²³^ORCID,Stanishev Vallery²^ORCID,Kühne Philipp²^ORCID,Hofmann Tino²⁴,Schubert Mathias²⁴^ORCID,Rosen Johanna¹,Yakimova Rositsa⁵,Persson Per O. Å.¹^ORCID,Darakchieva Vanya²^ORCID

Affiliation:

1. Thin Film Physics Division, Department of Physics, Chemistry and Biology IFM, Linköping University, 581 83 Linköping, Sweden

2. Terahertz Materials Analysis Center, THeMAC and Center for III-Nitride Technology, C3NiT–Janzén, Linköping University, 581 83 Linköping, Sweden

3. Center for Nanotechnology Innovation @NEST, Instituto Italiano di Tecnologia, Pisa, Italy

4. Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

5. Semiconductor Materials Division, Department of Physics, Chemistry and Biology IFM, Linköping University, 581 83 Linköping, Sweden

Funder

Swedish Research Council

Stiftelsen för Strategisk Forskning

International Interdisciplinary Laboratory for Advanced Functional Materials, Linköpings Universitet

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5134862

Reference33 articles.