Electron energy levels for a finite rectangular quantum wire in a transverse magnetic field
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2041848
Reference22 articles.
1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
2. Summary Abstract: High mobility effect of electrons in ultrafine semiconductor wire structures
3. Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures
4. Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties
5. Fabrication of GaAs arrowhead‐shaped quantum wires by metalorganic chemical vapor deposition selective growth
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1. Calculation of parallel Peltier coefficient in rectangular quantum wires under the influence of confined optical phonons and electromagnetic waves using quantum kinetic equation;Journal of the Korean Physical Society;2023-05-02
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3. Tuning of the intersubband absorption in a shallow InAs/InP quantum wire by a transverse electric field;Superlattices and Microstructures;2014-03
4. IR photodetector based on rectangular quantum wire in magnetic field;AIP Conference Proceedings;2014
5. Tuning intersubband absorption in a shallow InAs/InP quantum wire via a transverse tilted magnetic field;Physica B: Condensed Matter;2013-11
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