Metastable structures of cation vacancies in semiconducting oxides

Author:

Fowler W. Beall1ORCID,Stavola Michael1ORCID,Venzie Andrew1ORCID,Portoff Amanda1ORCID

Affiliation:

1. Physics Department, Lehigh University , Bethlehem, Pennsylvania 18015, USA

Abstract

The observed metastable characteristics of cation vacancies in Ga2O3 have prompted a wider search for such systems. In this Perspective, we consider a number of defect systems as candidates for metastability. Some of these are already known to have this property, while for others, this suggestion is new. The examples discussed here are but a sampling of a huge number of systems, and these are used to emphasize that the metastability of defect structures is both common and important; it may yield (for example) split vacancy equilibrium configurations and, hence, should be considered in developing defect models and in analyzing their properties.

Funder

National Science Foundation

Publisher

AIP Publishing

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates;Japanese Journal of Applied Physics;2024-07-01

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