Comprehensive doping and temperature studies of spin relaxation in InSb-Reference-Cited by-同舟云学术

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Comprehensive doping and temperature studies of spin relaxation in InSb

Published:2009-12-14 Issue:24 Volume:95 Page:241903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guzun D.,DeCuir E. A.,Kunets Vas. P.,Mazur Yu. I.,Salamo G. J.,Murphy S. Q.,Jayathilaka P. A. R. Dilhani,Mishima T. D.,Santos M. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3274040

Reference17 articles.

1. Technical Digest—IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC;Ashley T.,2006

2. Monte Carlo Simulations of High-Speed InSb–InAlSb FETs

3. Bipolar spintronics: Fundamentals and applications

4. Spintronics: electron spin coherence, entanglement, and transport

5. Electron Spin Resonance inn-Type InSb

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Longitudinal spin relaxation time of donor-bound electrons in a CdTe quantum well;Physical Review B;2020-10-29

2. Spin relaxation time of donor-bound electrons in a CdTe quantum well;Physical Review B;2019-06-04

3. Influence ofn-type doping on electron spin dephasing in CdTe;Physical Review B;2010-10-05

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