Mechanisms of suppressing secondary nucleation for low-power and low-temperature microwave plasma self-bias-enhanced growth of diamond films in argon diluted methane-Reference-Cited by-同舟云学术

Mechanisms of suppressing secondary nucleation for low-power and low-temperature microwave plasma self-bias-enhanced growth of diamond films in argon diluted methane

Published:2011-12 Issue:4 Volume:1 Page:042117
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jiang Ji-heng,Tzeng Yonhua

Funder

National Science Council Taiwan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3656241

Reference25 articles.

1. Diamond thin films: a 21st-century material

2. Synthesis of diamond in high power-density microwave methane/hydrogen/oxygen plasmas at elevated substrate temperatures

3. High electrical resistivity diamond films deposited from an oxyacetylene flame

4. Low temperature limits of diamond film growth by microwave plasma-assisted CVD

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