Investigation of deep-level defects in Cu(In,Ga)Se2 thin films by a steady-state photocapacitance method
Author:
Affiliation:
1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
2. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4899321
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2. What limits the efficiency of chalcopyrite solar cells?
3. Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2
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5. A stacked chalcopyrite thin-film tandem solar cell with 1.2 V open-circuit voltage
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Depth Profile of Impurity Phase in Wide-Bandgap Cu(In1−x,Gax)Se2 Film Fabricated by Three-Stage Process;Journal of Electronic Materials;2018-02-15
2. Optically induced metastability in Cu(In,Ga)Se2;Scientific Reports;2017-10-23
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