Hysteresis-free voltage gating of the skyrmion

Abstract

Magnetic skyrmions, which exhibit Brownian motion in solids, are considered good candidates as information carriers in devices, such as Brownian computers. Voltage control of skyrmions is essential for the ultralow power consumption of such devices. However, the gate operation must be realized with hysteresis-free voltage effects that are independent of ion migration for high-speed devices. In this study, we manipulated the skyrmion diffusion in a Ta|Co-Fe-B|Ta|MgO stacking structure by fabricating a device with a gate introducing an out-of-plane electrical field. Using feedback control, we rectified skyrmion diffusion in one direction, with the number of skyrmions passing through the gate wire from left to right N→ = 28 and from right to left N← = 43. Devices comprising Ta|Co-Fe-B|Pt|MgO junctions were fabricated, and a change in the density of skyrmions was observed upon the application of an out-of-plane electrical field. The creation or annihilation of skyrmions was dependent on the sign of the applied voltage. Furthermore, the skyrmions exhibited no hysteresis during the voltage sweep. Subsequently, the voltage dependence of the hysteresis loops in magneto-optical Kerr signals corresponding to the M–H curve was measured. However, no change was observed, nor was there any change in the saturated magnetization or perpendicular magnetic anisotropy. This result implied the voltage control of the Dzyaloshinskii–Moriya interaction.