Dominant mechanism for limiting the maximum operating temperature of InP‐based multiple‐quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361183
Reference17 articles.
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4. High temperature characteristics of InGaAsP/InP laser structures
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2. Two-Valued Characteristics in Semiconductor Quantum Well Lasers;Journal of Lightwave Technology;2018-06-01
3. Effect of doping profile on the output power of broadly tuneable InGaAsP/InP asymmetric multiple quantum well lasers: finite element method simulations and experimental results;IET Optoelectronics;2012
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