GaN Schottky diodes for piezoelectric strain sensing-Reference-Cited by-同舟云学术

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GaN Schottky diodes for piezoelectric strain sensing

Published:2003-05 Issue:9 Volume:93 Page:5675-5681
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Strittmatter R. P.,Beach R. A.,Brooke J.,Preisler E. J.,Picus G. S.,McGill T. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1558960

Reference11 articles.

1. Piezoelectric fields in nitride devices

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. Fabrication of GaN suspended microstructures

4. Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN

5. Piezoresistive effect in wurtzite n‐type GaN

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