Ferrimagnetic semiconductor with a direct bandgap
Author:
Affiliation:
1. Institute for Advanced Materials, School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China
2. Institute for Energy Research, Jiangsu University, Zhenjiang 212013, People's Republic of China
Funder
Senior Talent Foundation of Jiangsu University
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5141509
Reference24 articles.
1. Composition design, optical gap and stability investigations of lead-free halide double perovskite Cs2AgInCl6
2. CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector
3. Structural fluctuations cause spin-split states in tetragonal (CH3NH3)PbI3 as evidenced by the circular photogalvanic effect
4. The potential of III-V semiconductors as terrestrial photovoltaic devices
5. Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy
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