Origin of negative resistance in anion migration controlled resistive memory-Reference-Cited by-同舟云学术

Origin of negative resistance in anion migration controlled resistive memory

Published:2018-03-26 Issue:13 Volume:112 Page:133108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Banerjee Writam¹^ORCID,Wu Facai¹,Hu Yuan¹^ORCID,Wu Quantan¹^ORCID,Wu Zuheng¹,Liu Qi¹^ORCID,Liu Ming¹

Affiliation:

1. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5021019

Reference53 articles.

1. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

2. Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

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4. Engineering nonlinearity into memristors for passive crossbar applications

5. Oxide Heterostructure Resistive Memory

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