Effect of device design on charge offset drift in Si/SiO2 single electron devices-Reference-Cited by-同舟云学术

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Effect of device design on charge offset drift in Si/SiO2 single electron devices

Published:2018-10-14 Issue:14 Volume:124 Page:144302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hu Binhui¹^ORCID,Ochoa Erick D.²,Sanchez Daniel²,Perron Justin K.²^ORCID,Zimmerman Neil M.³,Stewart M. D.³

Affiliation:

1. Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, USA

2. Department of Physics, California State University San Marcos, San Marcos, California 92096, USA

3. Physical Measurement Lab, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5048013

Reference35 articles.

1. Accuracy of electron counting using a 7‐junction electron pump

2. Parallel quantized charge pumping

3. Parallel pumping of electrons

4. Stabilization of single-electron pumps by high magnetic fields

5. Towards a quantum representation of the ampere using single electron pumps

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge-offset stability of single-electron devices based on single-layered Fe nanodot array;AIP Advances;2021-03-01

2. Reduction of charge offset drift using plasma oxidized aluminum in SETs;Scientific Reports;2020-10-26

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