Electroluminescence and high‐field domains in GaAs/AlGaAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102513
Reference8 articles.
1. Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
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3. New Transport Phenomenon in a Semiconductor "Superlattice"
4. Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain
5. High‐field transport in an InGaAs‐InP superlattice grown by chemical beam epitaxy
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1. Rearrangement of resonant-tunneling structure in the electric field revealed by complementary photoluminescence and vertical transport characterization of the GaAs/AlGaAs long-period superlattices;SPIE Proceedings;2006-05-24
2. Non-linear dynamics of semiconductor superlattices;Reports on Progress in Physics;2005-02-09
3. Electric-Field Domains, Pockels Effect and Coherent Acoustic Phonons in Superlattices;Optical Spectroscopy of Low Dimensional Semiconductors;1997
4. Quantum-Well Devices for Infrared Emission;Thin Films;1997
5. Resonant tunneling times in superlattice structures;Journal of Applied Physics;1996-05-15
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