Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates-Reference-Cited by-同舟云学术

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Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates

Published:2019-10-07 Issue:13 Volume:126 Page:134501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fujita H.¹,Nakayama M.¹,Morohara O.¹,Geka H.¹,Sakurai Y.¹,Nakao T.²,Yamauchi T.²,Suzuki M.¹,Shibata Y.¹,Kuze N.¹

Affiliation:

1. Compound Semiconductor Development Department, R&D Center, Asahi Kasei Microdevices Corporation, 2-1 Samejima, Fuji, Shizuoka 416-8501, Japan

2. Platform Laboratory for Science and Technology, Corporate R&D, Asahi Kasei Corporation, 2-1 Samejima, Fuji, Shizuoka 416-8501, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5111933

Reference19 articles.

1. A review on non-dispersive infrared gas sensors: Improvement of sensor detection limit and interference correction

2. NDIR gas sensing using high performance AlInSb mid-infrared LEDs as light source

3. Recombination processes in midinfrared AlxIn1−xSb light-emitting diodes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of highly lattice mismatched AlInSb diodes on GaAs substrates for thermophotovoltaic cells;Journal of Physics D: Applied Physics;2022-01-31

2. InAsSb photodiodes grown on GaAs substrates for long-wavelength-infrared gas-sensing applications;Semiconductor Science and Technology;2021-08-23

3. Realization of high detectivity mid-infrared photodiodes based on highly mismatched AlInSb on GaAs substrates;Journal of Applied Physics;2021-02-07

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