Three-dimensional self-consistent simulation of interface and dopant disorders in delta-doped grid-gate quantum-dot devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365967
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1. Activation energy in the early stage of electromigration in Al-1% Si/TiN/Ti bamboo lines
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5. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's
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1. Temperature modulation of the transmission barrier in quantum point contacts;Physical Review B;2013-08-07
2. Simulation of Capacitance-Voltage characteristics of Ultra-thin Metal-Oxide-Semiconductor Structures with Embedded Nanocrystals;MRS Proceedings;2008
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