Computer‐aided study of hot wall epitaxy system using a Monte‐Carlo technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332718
Reference13 articles.
1. Hot wall epitaxy
2. Three-temperature method as an origin of molecular beam epitaxy
3. Epitaxial Growth of Lead Tin Telluride
4. Vacuum deposition of epitaxial ZnSe on GaAs
5. Epitaxial growth of AIIBVI type compounds under quasi-equilibrium conditions
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1. Structural and Optical Studies of Hot Wall Vacuum Evaporated CdTeSn Thin Films;Advanced Materials Research;2009-04
2. Texture-tuned growth of CdTe thin films by closed-space sublimation technique;Powder Diffraction;2008-03
3. Simulation for deposition of cadmium telluride thin films in hot wall epitaxial system using Monte Carlo technique;Journal of Physics D: Applied Physics;2006-03-30
4. Influence of deposition conditions on the structural characteristics of sublimated CdTe thin films;Applied Physics A: Materials Science & Processing;2000-05-01
5. Structural characterization of hot wall deposited cadmium selenide thin films;Semiconductor Science and Technology;1998-09-01
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