Towards fully electrically controlled domain-wall logic

Author:

Vermeulen B. B.12ORCID,Raymenants E.1ORCID,Pham V. T.13ORCID,Pizzini S.3ORCID,Sorée B.145ORCID,Wostyn K.1ORCID,Couet S.1ORCID,Nguyen V. D.1ORCID,Temst K.12ORCID

Affiliation:

1. Interuniversity Microelectronics Center (IMEC) 1 , 3001 Leuven, Belgium

2. KU Leuven, QSP Division 2 , Celestijnenlaan 200 D - Box 2414, 3001 Leuven, Belgium

3. Univ. Grenoble Alpes, CNRS, Institut Néel 3 , 38042 Grenoble, France

4. KU Leuven, ESAT-INSYS Division 4 , Kasteelpark Arenberg 10, 3001 Leuven, Belgium

5. Universiteit Antwerpen, Departement of Physics 5 , Groenenborgerlaan 171, 2020 Antwerp, Belgium

Abstract

Utilizing magnetic tunnel junctions (MTJs) for write/read and fast spin-orbit-torque (SOT)-driven domain-wall (DW) motion for propagation, enables non-volatile logic and majority operations, representing a breakthrough in the implementation of nanoscale DW logic devices. Recently, current-driven DW logic gates have been demonstrated via magnetic imaging, where the Dzyaloshinskii-Moriya interaction (DMI) induces chiral coupling between perpendicular magnetic anisotropy (PMA) regions via an in-plane (IP) oriented region. However, full electrical operation of nanoscale DW logic requires electrical write/read operations and a method to pattern PMA and IP regions compatible with the fabrication of PMA MTJs. Here, we study the use of a Hybrid Free Layer (HFL) concept to combine an MTJ stack with DW motion materials, and He+ ion irradiation to convert the stack from PMA to IP. First, we investigate the free layer thickness dependence of 100-nm diameter HFL-MTJ devices and find an optimal CoFeB thickness, from 7 to 10 Å, providing high tunneling magnetoresistance (TMR) readout and efficient spin-transfer torque (STT) writing. We then show that high DMI materials, like Pt/Co, can be integrated into an MTJ stack via interlayer exchange coupling with the CoFeB free layer. In this design, DMI values suitable for SOT-driven DW motion are measured by asymmetric bubble expansion. Finally, we demonstrate that He+ irradiation reliably converts the coupled free layers from PMA to IP. These findings offer a path toward the integration of fully electrically controlled DW logic circuits.

Funder

Fonds Wetenschappelijk Onderzoek

Publisher

AIP Publishing

Reference25 articles.

1. Proposal of a spin torque majority gate logic;IEEE Electron Device Lett.,2011

2. Beyond CMOS,2021

3. Nanoscale domain wall devices with magnetic tunnel junction read and write;Nat. Electron.,2021

4. Magnetic domain walls: From physics to devices,2021

5. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection;Nature,2011

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